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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：57 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5070 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：250W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD18542KTTT is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a D2PAK-3 (TO-263-3) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 60 V, a continuous drain current of 200 A, and a maximum on-resistance of 4 mOhms. The device supports a gate-source voltage range of -20 V to 20 V with a threshold voltage of 1.8 V. It operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 250 W.
Feature Summary
- NexFET technology for enhanced power efficiency
- Low on-resistance for reduced conduction losses
- High thermal stability for demanding environments
Applications
- DC-DC converters
- Power switching applications
- Motor control circuits
Procurement Notes
Verify the exact suffix against official documentation, as 'KTT' may denote specific tape-and-reel packaging or variant details not fully detailed in general summaries. Confirm RoHS compliance status via the manufacturer's datasheet before integration. Ensure the ordering part number matches the required package and reel specifications for your manufacturing process.
Selection Notes
Select this component when high current handling up to 200 A is required alongside low voltage drop characteristics. The TO-263-3 package offers robust thermal performance suitable for board-level heat dissipation. Consider the 60V rating for systems operating below this threshold to ensure adequate safety margins.
Part Context
This device belongs to the CSD18 series of NexFET transistors from Texas Instruments. The series focuses on optimizing the figure of merit between on-resistance and gate charge. The KTT suffix typically indicates a specific reel quantity or packaging configuration used for automated assembly processes.
Replacement Considerations
Check for direct substitutes within the same NexFET family that offer similar Rds(on) and current ratings. Verify pinout compatibility if replacing with devices from other manufacturers. Ensure thermal resistance values are comparable to maintain existing cooling solutions.
