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The CSD18563Q5AT is a single N-channel NexFET power MOSFET from Texas Instruments, housed in an 8-VSONP (5x6) surface-mount package. It features a 60V drain-source voltage rating and supports continuous drain currents of 100A at ambient temperature and 100A at case temperature. The device exhibits a maximum on-resistance of 6.8mΩ at 10V gate drive and 18A current. Key electrical characteristics include a maximum gate charge of 20nC at 10V, an input capacitance of 1500pF at 30V, and a threshold voltage of 2.4V at 250µA. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the assembly process. Cross-reference the component marking code with the latest production documentation to validate authenticity and traceability during the sourcing phase.
Select this component when a 60V rating is required alongside high current handling capabilities in a compact footprint. Evaluate the thermal resistance parameters relative to the intended PCB copper area to ensure adequate heat dissipation. Compare the gate charge specifications against available driver outputs to determine if additional drive strength is necessary for optimal switching efficiency.
This part belongs to the CSD18563 series of NexFET power MOSFETs designed for high-efficiency power conversion. The Q5A suffix typically denotes specific manufacturing lot or packaging variations within the standard product line. These devices are engineered to replace older generation MOSFETs offering improved figure-of-merit metrics for modern power supply designs.
CSD18563Q5A is listed as a parameter-equivalent substitute.