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Product Detailed Parameters
- Description：MOSFET N-CH 80V 150A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：150A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 100A, 6V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：76 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7820 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD19505KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features an 80V drain-source breakdown voltage (Vds). The device supports a continuous drain current of 100A at 25°C and offers a maximum on-resistance (Rds(on)) of 3.1 milliohms at Vgs=10V. It operates within a junction temperature range of -55°C to +175°C with a power dissipation rating of 300W. Packaged in a TO-220-3 through-hole case, it exhibits a gate charge of 76nC and threshold voltage of 2.6V.
Feature Summary
- NexFET technology designed for high-efficiency power switching applications
- Enhancement mode N-channel configuration for standard logic-level control
- Robust thermal performance supporting up to 300W power dissipation
Applications
- DC-DC converter circuits
- Motor drive systems
- Power supply output stages
Procurement Notes
Verify the specific suffix 'KCS' corresponds to the TO-220-3 tube packaging variant when sourcing. Confirm RoHS compliance status via the manufacturer's official datasheet or component specification sheet prior to integration. Ensure the ordering part number matches the required through-hole mounting style and electrical ratings for the target design.
Selection Notes
Select this component for designs requiring low conduction losses at 80V blocking capability. The TO-220-3 package facilitates efficient heat sinking for high-current applications. Compare Rds(on) and gate charge specifications against alternative NexFET devices to optimize switching efficiency and thermal management requirements for the specific circuit topology.
Part Context
This device belongs to the Texas Instruments NexFET family of power MOSFETs. The series focuses on minimizing on-resistance while maintaining robust avalanche capabilities. The CSD19505KCS specifically targets medium-voltage applications where low loss and reliable thermal operation are critical for system performance.
Replacement Considerations
Consult the official Texas Instruments NexFET selection guide for electrically equivalent alternatives. Verify pinout compatibility and thermal characteristics before substituting with other TO-220-3 N-channel MOSFETs.
