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Product Detailed Parameters
- Description：MOSFET N-CH 80V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：76 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7920 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD19505KTT is an N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a drain-source breakdown voltage of 80 V and a continuous drain current rating of 150 A. The device exhibits a maximum on-resistance of 3.1 mΩ at a gate-source voltage of 10 V. It operates within a temperature range from -55 °C to +175 °C with a power dissipation capacity of 300 W. Key electrical parameters include a gate threshold voltage of 2.2 V, a total gate charge of 76 nC, and a maximum gate-source voltage of ±20 V.
Feature Summary
- NexFET technology designed for low conduction losses and fast switching performance
- Enhanced avalanche ruggedness for robust operation in inductive load environments
- Lead-free package construction compliant with RoHS standards
Applications
- DC-DC converter modules
- Motor control circuits
- Power supply output stages
Procurement Notes
Verify the specific suffix (T or TT) against the manufacturer's official datasheet to confirm the correct packaging format, such as cut tape or reel. Ensure the component meets the required thermal management specifications for the intended application environment. Confirm lead-free status and RoHS compliance through the official documentation provided by Texas Instruments before finalizing procurement orders.
Selection Notes
Select this component when an 80 V N-channel MOSFET with high current handling capability is required. The 3.1 mΩ on-resistance supports efficient power conversion in low-voltage applications. Verify that the TO-263-3 package fits the PCB layout constraints and that the thermal resistance characteristics align with the system's heat dissipation design requirements.
Part Context
This part belongs to the NexFET family from Texas Instruments, which utilizes advanced silicon processes to optimize the trade-off between on-resistance and gate charge. The series targets high-efficiency power management solutions where compact size and thermal performance are critical design factors for modern electronic systems.
Replacement Considerations
Consult the official Texas Instruments selection guide for direct pin-compatible alternatives within the CSD195xx series. Verify that any substitute maintains identical voltage ratings, current capabilities, and package dimensions to ensure circuit compatibility without redesign.
