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Product Detailed Parameters
- Description：MOSFET N-CH 80V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：76 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7920 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD19505KTTT is an N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a drain-source breakdown voltage (Vds) of 80 V and a continuous drain current (Id) of 150 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 3.1 mΩ at Vgs = 10 V. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2.2 V, total gate charge (Qg) of 76 nC, and power dissipation (Pd) of 300 W. It operates within a temperature range of -55°C to +175°C junction temperature.
Feature Summary
- NexFET technology designed for low conduction losses
- Enhanced avalanche ruggedness capability
- Lead-free package with RoHS compliance
Applications
- DC-DC converter modules
- Power factor correction circuits
- Motor control systems
Procurement Notes
Verify the specific suffix 'TT' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure the ordered part matches the exact pinout and thermal characteristics defined in the TO-263 (D2PAK-3) package documentation. Cross-reference the component marking with the official identification guide to prevent counterfeit substitution.
Selection Notes
Select this component when an 80 V rating and high current handling are required in a surface-mount D2PAK package. The low Rds(on) value supports efficient power conversion in compact designs. Verify that the gate drive voltage aligns with the specified threshold and charge requirements for optimal switching performance.
Part Context
This part belongs to the Texas Instruments NexFET family of power MOSFETs. These devices utilize advanced silicon processes to minimize on-resistance while maintaining fast switching speeds. The series is engineered for high-efficiency power management applications requiring robust thermal performance and reliable operation under demanding electrical conditions.
Replacement Considerations
Consult the official TI replacement matrix for verified equivalents. Do not substitute based solely on matching voltage or current ratings without verifying package compatibility and thermal resistance values.
