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Product Detailed Parameters
- Description：MOSFET N-CH 80V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：156 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12200 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：375W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD19506KTT is an N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a maximum drain-source voltage of 80 V and a continuous drain current of 200 A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 2.3 mΩ at 100 A and 10 V gate drive. Key electrical parameters include a maximum gate charge of 156 nC, an input capacitance of 12,200 pF, and a threshold voltage of 3.2 V. It operates within a junction temperature range of -55°C to 175°C and is housed in a TO-263 (DDPAK-3) surface-mount package.
Feature Summary
- NexFET technology designed for low conduction losses and fast switching performance
- Avalanche-rated capability for robust operation under transient conditions
- Integrated body diode for synchronous rectification applications
Applications
- High-density synchronous buck converters
- Point-of-load power stages
- DC-DC converter output stages
Procurement Notes
Verify the specific suffix against official documentation, as variations may exist between KTTT and KTT designations. Confirm RoHS compliance and moisture sensitivity level requirements with the manufacturer's datasheet before procurement. Ensure ordering specifications match the exact package and electrical ratings required for the target application circuit.
Selection Notes
Select this component for applications requiring high current handling in a compact surface-mount form factor. Evaluate thermal management needs based on the specified power dissipation limits. Compare gate charge and on-resistance values against system efficiency targets and driver capabilities to ensure optimal switching performance.
Part Context
This part belongs to the CSD19506 series of NexFET Power MOSFETs from Texas Instruments. The series focuses on optimizing the trade-off between on-resistance and gate charge for efficient power conversion. The TO-263 package provides a balance between thermal performance and PCB space constraints compared to smaller surface-mount options.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully when considering similar NexFET devices or competitors' offerings.
