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Product Detailed Parameters
- Description：MOSFET N-CH 100V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：6.4mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id：3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3870 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.3W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD19531Q5A is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a VDS rating of 100 V and supports a continuous drain current (Id) of 100 A at case temperature. The device exhibits a maximum RDS(on) of 6.4 mΩ at VGS = 10 V. Key electrical parameters include a gate charge (Qg) of 48 nC at 10 V, an input capacitance (Ciss) of 3870 pF at 50 V, and a threshold voltage (VGS(th)) of 3.3 V max at 250 µA. The component operates within a junction temperature range of -55°C to +150°C and utilizes an 8-VSONP (5x6) surface-mount package.
Feature Summary
- NexFET technology enables low on-resistance for high-efficiency power switching applications.
- Enhanced thermal performance through the exposed pad VSONP-8 package design.
- Optimized gate charge characteristics support fast switching speeds in power conversion circuits.
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch implementations
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested part number matches the exact electrical specifications required for the target application circuit. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement orders.
Selection Notes
Select this component when a compact surface-mount solution is required for 100 V applications. The 6.4 mΩ on-resistance offers a balance between conduction losses and package size constraints. Ensure the driving circuit can supply sufficient gate voltage to achieve the specified low resistance values during operation.
Part Context
This device belongs to the CSD19531 series from Texas Instruments, designed for general-purpose power management tasks. The Q5A suffix denotes the specific tape-and-reel or cut-tape packaging variant available for automated assembly processes. It represents a standard offering within the company's portfolio of silicon-based N-channel MOSFETs.
Replacement Considerations
Consult the official Texas Instruments website for verified substitute part numbers with compatible pinouts and electrical ratings. Do not assume interchangeability based solely on package similarity; verify all critical parameters against the original datasheet.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage (VGS) is rated at ±20 V.
Does the CSD19531Q5A have internal body diode characteristics defined?
Yes, as a discrete N-channel MOSFET, it includes an intrinsic body diode, though specific reverse recovery parameters should be checked in the full datasheet.
