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Product Detailed Parameters
- Description：MOSFET N-CH 100V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：4.9mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4810 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 195W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD19532Q5B is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a Vds rating of 100 V and a continuous drain current (Id) of 140 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 4.9 mOhms at Vgs = 10 V. Gate specifications include a threshold voltage (Vgs th) of 2.2 V and a total gate charge (Qg) of 48 nC. Electrical performance includes rise and fall times of 6 ns, with a minimum forward transconductance of 84 S. The component operates within a junction temperature range of -55°C to +150°C and supports power dissipation up to 195 W under case conditions.
Feature Summary
- Utilizes NexFET technology for enhanced switching efficiency and low conduction losses.
- Features an 8-pin VSON-CLIP package designed for superior thermal management and low inductance.
- Provides high-speed switching capabilities with optimized gate charge characteristics.
Applications
- DC-DC converter modules
- Point-of-load (POL) power supplies
- Synchronous rectification circuits
Procurement Notes
Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure ordering codes match the required moisture sensitivity level and packaging format for automated assembly processes.
Selection Notes
Select this component when a compact surface-mount solution is required for high-current applications. The VSON-CLIP package offers a balance between footprint size and thermal performance. Evaluate the 4.9 mOhm on-resistance against system efficiency targets and verify that the 100 V breakdown voltage exceeds peak circuit voltages.
Part Context
This part belongs to the CSD19532 series of NexFET Power MOSFETs from Texas Instruments. The series focuses on delivering low Rds On values in small form factors. The Q5B designation specifically identifies the VSON-CLIP-8 package variant within this product line.
Replacement Considerations
Consult official substitution guides for equivalent parts. Verify pinout compatibility and thermal resistance parameters before replacing existing designs with alternative manufacturers' components.
