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Product Detailed Parameters
- Description：MOSFET N-CH 100V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：9.4mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2670 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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FAQ
Is the CSD19533Q5A available in a D2PAK package?
No, the CSD19533Q5A is not listed in the provided documentation. The CSD19532KTT is the NexFET MOSFET documented with a D2PAK-3 (TO-263-3) package.
What is the maximum continuous drain current for the CSD19533Q5A?
The provided source material does not contain specifications for the CSD19533Q5A. Data is only available for other models such as the CSD19532KTT and CSD19534Q5AT.
