CSD19533Q5AT

Product Detailed Parameters

• Description：MOSFET N-CH 100V 100A 8VSON
• Series：NexFET™
• Mfr：Texas Instruments
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：100 V
• Current - Continuous Drain (Id) @ 25°C：100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
• Rds On (Max) @ Id, Vgs：9.4mOhm @ 13A, 10V
• Vgs(th) (Max) @ Id：3.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：2670 pF @ 50 V
• FET Feature：-
• Power Dissipation (Max)：3.2W (Ta), 96W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：8-VSONP (5x6)
• Package / Case：8-PowerTDFN

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