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Product Detailed Parameters
- Description：MOSFET N-CH 100V 50A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：15.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 63W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD19534Q5AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a VDS rating of 100V and a continuous drain current (Id) of 50A. The device exhibits a maximum RDS(on) of 15.1 mΩ at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation capability of 63W. The component utilizes an 8-VSONP package.
Feature Summary
- NexFET technology for enhanced switching performance
- Low on-resistance for efficient power handling
- Single channel enhancement mode configuration
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific suffix 'AT' against the official Texas Instruments datasheet to confirm tape and reel packaging specifications. Ensure the ordering part number matches the exact electrical parameters required for the design, as variations in suffixes may indicate different packaging or testing criteria.
Selection Notes
Select this component when a 100V N-channel MOSFET with low gate charge is required. The 8-VSONP package suits space-constrained designs. Verify thermal management requirements given the 63W power dissipation rating and ensure the driving circuit supports the specified VGS thresholds.
Part Context
This part belongs to the CSD19534Q5A series from Texas Instruments. It is designed for high-efficiency power conversion applications. The NexFET branding indicates optimized silicon technology for reduced conduction and switching losses compared to standard MOSFETs.
Replacement Considerations
Check for direct substitutes within the CSD19534Q5A family. Verify pinout compatibility and electrical ratings before substituting with other manufacturers' parts.
