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Product Detailed Parameters
- Description：MOSFET N-CH 100V 150A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：150A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：101 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7930 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD19535KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a TO-220-3 through-hole package. The device supports a drain-source voltage of 100 V and delivers a continuous drain current of 187 A. Its on-resistance is specified at 3.6 mOhms, with a gate charge of 78 nC. The component operates within a temperature range of -55°C to +175°C and handles up to 300 W of power dissipation.
Feature Summary
- NexFET technology for enhanced power efficiency
- Single N-channel configuration
- Through-hole mounting style
Applications
- Power management systems
- DC-DC converters
- Motor control applications
Procurement Notes
Verify the specific manufacturer part number against official Texas Instruments documentation to ensure authenticity. Confirm that the ordering suffix matches the required package type and tape/reel or tube specifications. Cross-reference datasheet revisions to confirm compliance with current RoHS and REACH standards before finalizing procurement orders.
Selection Notes
Select this component when a robust through-hole solution is required for high-current switching applications. The TO-220-3 package facilitates effective thermal management for power dissipation levels up to 300 W. Ensure the driving circuit can support the necessary gate charge and voltage thresholds for reliable enhancement mode operation.
Part Context
This component belongs to the CSD19535 series of NexFET power MOSFETs from Texas Instruments. The series offers various voltage and current ratings within the same family, allowing designers to scale performance while maintaining consistent packaging and interface characteristics across different power requirements.
Replacement Considerations
Consult official substitution guides for compatible alternatives such as the CSD19535KTT in surface-mount configurations. Verify pinout compatibility and electrical parameter equivalence before implementing any cross-package replacements.
