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Product Detailed Parameters
- Description：MOSFET N-CH 100V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7930 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD19535KTT is an N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a drain-source breakdown voltage of 100 V and a continuous drain current rating of 200 A at ambient temperature. The device exhibits a maximum on-resistance of 3.6 milliohms at a gate-source voltage of 10 V. It operates within a junction temperature range of -55°C to +175°C and has a power dissipation capacity of 300 W when case-temperature controlled. The component utilizes a D2PAK-3 (TO-263-3) surface-mount package.
Feature Summary
- NexFET technology designed for low conduction losses
- Enhanced avalanche ruggedness for robust operation
- Lead-free packaging compliant with RoHS standards
Applications
- Synchronous rectification in DC-DC converters
- High-efficiency power supply designs
- Motor control applications requiring low on-resistance
Procurement Notes
Verify the specific suffix against official documentation, as variations may indicate differences in tape-and-reel specifications or manufacturing lot codes. Confirm that the requested quantity aligns with standard packaging multiples to avoid partial reel handling fees. Ensure the supplier provides traceability documentation consistent with original manufacturer standards for quality assurance purposes.
Selection Notes
Select this component for applications prioritizing high current handling and minimal thermal resistance in a surface-mount form factor. Evaluate the trade-off between the 3.6 milliohm on-resistance and the required gate drive voltage to ensure optimal switching performance. Consider the thermal management requirements associated with the TO-263-3 package for sustained high-power operations.
Part Context
This part belongs to the NexFET family from Texas Instruments, which focuses on optimizing the figure of merit for power efficiency. The series targets modern power electronics demanding reduced footprint and improved thermal characteristics compared to traditional discrete solutions.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the same voltage and current class. Verify pinout compatibility and thermal pad dimensions before integrating any cross-reference parts into existing board layouts.
