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Product Detailed Parameters
- Description：MOSFET N-CH 100V 150A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：150A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：2.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：153 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12000 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：375W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD19536KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage (Vds) of 100 V and supports a continuous drain current (Id) of 259 A. Its maximum on-resistance (Rds On) is 2.7 mΩ, with a gate threshold voltage (Vgs th) of 2.1 V. Total gate charge (Qg) is 118 nC. Power dissipation reaches 375 W, operating within a temperature range of -55°C to +175°C.
Feature Summary
- NexFET technology designed for low conduction losses
- Enhancement mode N-channel configuration
- Avalanche rated capability
Applications
- High-power synchronous buck converters
- DC-DC load management applications
- Power conversion systems requiring high efficiency
Procurement Notes
Verify the specific suffix KCS confirms the TO-220-3 through-hole package variant. Confirm RoHS compliance status via official documentation before integration. Ensure thermal management solutions align with the 375 W power dissipation rating at case temperature. Validate that the 100 V rating meets circuit requirements.
Selection Notes
Select this component when a through-hole N-channel MOSFET with 100 V rating and low on-resistance is required. Compare against surface-mount alternatives like the CSD19536KTT if PCB space constraints exist. Consider the 259 A current capacity for heavy-load designs. Verify gate drive compatibility with the 2.1 V threshold voltage.
Part Context
This part belongs to the CSD19536 series of NexFET power MOSFETs from Texas Instruments. The series includes variants with different packaging options, such as the TO-263 DDPAK-3 for surface mount applications. All variants share similar electrical characteristics optimized for high-density power conversion.
Replacement Considerations
The CSD19536KTT serves as a surface-mount equivalent within the same family. Verify pinout compatibility and thermal performance differences between TO-220-3 and TO-263 packages when substituting.
