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Product Detailed Parameters
- Description：100-V, N CHANNEL NEXFET POWER MO
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta), 13.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：59mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：454 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 20.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD19538Q2R is a single N-channel NexFET power MOSFET from Texas Instruments, housed in a WSON-6 (DQK) package with dimensions of 2.00mm x 2.00mm. It features a drain-to-source voltage rating of 100V and a maximum gate-to-source voltage of ±20V. The device exhibits an on-resistance of 49mΩ at VGS=10V and 58mΩ at VGS=6V. Total gate charge is 4.3nC to 5.6nC, while the threshold voltage ranges from 2.8V to 3.8V. Continuous drain current reaches 14.4A (package limited). Operating junction temperature spans -55°C to +150°C.
Feature Summary
- Ultra-low gate charge and gate-drain charge for minimized switching losses
- Low thermal resistance for efficient heat dissipation
- Rated for avalanche energy under specific unclamped inductive switching conditions
Applications
- Power over ethernet (PoE)
- Power sourcing equipment (PSE)
- Motor control
Procurement Notes
Verify the ordering suffix 'R' corresponds to the 10,000-unit jumbo tape and reel configuration. Confirm the package type matches the WSON DQK specification. Ensure compliance with RoHS and lead-free requirements as stated in the datasheet. Check moisture sensitivity level ratings before assembly.
Selection Notes
Select this component for applications requiring low conduction and switching losses within a compact footprint. Evaluate thermal performance based on PCB copper pad area and ambient conditions. Consider the 100V rating and 14.4A continuous current limits when designing the circuit. Verify gate drive voltage compatibility with the specified RDS(on) thresholds.
Part Context
This part belongs to the CSD19538Q2 series of NexFET power MOSFETs. It is designed by Texas Instruments to optimize efficiency in power conversion systems. The device utilizes silicon technology and is available in various packaging options including standard reels and cut tape formats.
Replacement Considerations
Consult the official orderable addendum for verified substitute part numbers. Cross-reference electrical parameters such as RDS(on), Qg, and package dimensions to ensure functional equivalence.
