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Product Detailed Parameters
- Description：MOSFET N-CH 100V 13.1A 6WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：13.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：59mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：454 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 20.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD19538Q2T is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a WSON-FET-6 surface-mount package. The device features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 14.4 A. Its on-resistance is specified at 59 mOhms, with a gate-source voltage range of -20 V to 20 V. The threshold voltage is 3.2 V, and the total gate charge is 4.3 nC. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 2.5 W.
Feature Summary
- NexFET technology for enhanced power efficiency
- Low on-resistance for reduced conduction losses
- Fast switching characteristics with low gate charge
- Enhancement mode operation
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific suffix 'T' indicates the reel packaging configuration as documented. Confirm the WSON-FET-6 package dimensions match the design layout requirements. Ensure the 100V rating aligns with the system's maximum operating voltage. Check RoHS compliance status through official manufacturer channels before integration.
Selection Notes
Select this component when a compact N-channel MOSFET with moderate current handling is required. The 59 mOhm on-resistance offers a balance between conduction loss and cost. The small WSON-FET-6 footprint suits space-constrained designs. Verify thermal management capabilities given the 2.5 W power dissipation limit in the selected package.
Part Context
This part belongs to the CSD19538Q2 series of NexFET Power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power switching applications. The series emphasizes low on-resistance and fast switching speeds within a compact form factor suitable for modern electronic equipment.
Replacement Considerations
Consult official Texas Instruments documentation for verified pin-compatible or functionally equivalent alternatives. Cross-reference specifications such as Rds(on), Vds, and package type when evaluating substitutes.
