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Product Detailed Parameters
- Description：MOSFET N-CH 100V 15A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：59mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：454 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 23W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (3x3.3)
- Package / Case：8-PowerVDFN
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Overview
The CSD19538Q3AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 100 V drain-source voltage rating and a continuous drain current of 72 A at 25°C. The device exhibits a maximum on-resistance of 6.4 mΩ at 10 V gate drive. It utilizes an 8-VSONP package with dimensions of 5x6 mm. The component supports a junction temperature range from -55°C to +150°C and includes thermal performance specifications of 3.3 W (Ta) and 125 W (Tc).
Feature Summary
- NexFET technology designed for high efficiency and low conduction losses.
- Enhanced switching performance characterized by low gate charge and fast transition times.
- Robust thermal management capabilities within the compact PowerTDFN package.
Applications
- DC-DC converter modules
- Point-of-load regulation circuits
- Power management systems
Procurement Notes
Verify the specific suffix 'AT' against the manufacturer's official documentation to confirm tape-and-reel packaging details and moisture sensitivity level. Ensure compatibility with standard surface-mount assembly processes. Cross-reference the exact part number with the latest datasheet revision to validate electrical parameters and pinout configurations before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a balance of low on-resistance and high current handling in a small footprint. Consider the 100 V rating and 72 A current capacity relative to system load requirements. Evaluate the thermal dissipation characteristics against the available PCB copper area to ensure reliable operation under maximum load conditions without exceeding junction temperature limits.
Part Context
This device belongs to the CSD19538 series of NexFET power MOSFETs. It represents a generation of silicon-based transistors optimized for power density. The Q3A designation typically indicates specific packaging or testing variations within the broader product family, distinguishing it from other variants like the Q5A series which may offer different resistance or current ratings.
Replacement Considerations
Consult official substitution guides for compatible alternatives such as the CSD19538Q5A. Verify that any substitute maintains identical pinout, voltage ratings, and thermal performance to ensure direct interchangeability without circuit redesign.
