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Product Detailed Parameters
- Description：MOSFET P-CH 8V 10A 9DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：12.2mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：1390 pF @ 4 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：9-DSBGA
- Package / Case：9-UFBGA, DSBGA
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Overview
The CSD22202W15 is a single-channel P-Channel MOSFET from the NexFET family, manufactured by Texas Instruments. It features an 8V drain-source voltage rating and supports a continuous drain current of 10A at ambient temperature. The device utilizes a 9-DSBGA surface-mount package with a maximum power dissipation of 1.5W. Key electrical parameters include a maximum on-resistance of 12.2mΩ at 4.5V gate drive, a gate charge of 8.4nC, and a threshold voltage of 1.1V.
Feature Summary
- NexFET technology optimized for low on-resistance and fast switching performance
- Enhancement-mode P-Channel configuration for high-side load control
- Surface-mount DSBGA package designed for compact board space utilization
Applications
- DC-DC converter synchronous rectification
- Low-side and high-side load switches
- Power management circuits in portable devices
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging format, such as tape and reel or cut tape, as these affect handling procedures. Confirm that the component status remains active before finalizing procurement plans. Cross-reference the manufacturer datasheet for updated environmental compliance details and moisture sensitivity levels to ensure compatibility with assembly processes.
Selection Notes
Select this component when an 8V rating and 10A current capacity are required in a minimal footprint. Evaluate the thermal performance within the 9-DSBGA package against the expected power dissipation limits. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low on-resistance characteristics effectively.
Part Context
This part belongs to the Texas Instruments NexFET series, which focuses on silicon-based power MOSFETs. The CSD22202W15 is specifically engineered for applications demanding efficient power conversion and robust switching capabilities within small form factors typical of modern consumer electronics and industrial systems.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the same voltage and current class. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.
