CSD22204W

$0.73

Description：MOSFET P-CH 8V 5A 9DSBGA
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0d07b504c5bf Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 8V 5A 9DSBGA
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：8 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：9.9mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24.6 nC @ 4.5 V
Vgs (Max)：-6V
Input Capacitance (Ciss) (Max) @ Vds：1130 pF @ 4 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：9-DSBGA
Package / Case：9-UFBGA, DSBGA

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CSD22204W

Overview

The CSD22204W is a single-channel P-Channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a DSBGA-9 surface-mount package. The device features an 8 V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 5 A. Key electrical parameters include a maximum on-resistance (Rds On) of 14 mΩ, a gate charge (Qg) of 24.6 nC, and a threshold voltage (Vgs th) of 450 mV. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 1.7 W.

Feature Summary

NexFET technology optimized for low conduction losses
Enhancement mode P-Channel configuration
High thermal stability up to 150 °C junction temperature

Applications

Point-of-load synchronous buck converters
Low-voltage power management circuits
Computing and networking systems

Procurement Notes

Verify the specific suffix (e.g., WT vs W) against the manufacturer's official datasheet to confirm packaging type and reel specifications. Ensure the component matches the required DSBGA-9 footprint and pinout configuration for your PCB layout. Cross-reference the RoHS compliance status directly with the latest TI documentation before finalizing procurement orders.

Selection Notes

Select this component when a low-side or high-side switch requires an 8 V rating with minimal on-resistance. The 14 mΩ Rds On at appropriate gate drive voltages ensures efficient power handling for 5 A loads. Consider the DSBGA-9 package size constraints and thermal requirements relative to the 1.7 W dissipation limit during circuit design.

Part Context

This part belongs to the CSD22204W series of NexFET Power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power conversion applications where low input voltage and compact form factors are critical. The series leverages advanced silicon processes to minimize switching and conduction losses compared to standard MOSFETs.