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Product Detailed Parameters
- Description：MOSFET P-CH 8V 5A 9DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9.9mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24.6 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：1130 pF @ 4 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：9-DSBGA
- Package / Case：9-UFBGA, DSBGA
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Overview
The CSD22204WT is a single-channel P-Channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a DSBGA-9 surface-mount package. The device features an 8 V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 5 A. Key electrical characteristics include a maximum on-resistance (Rds On) of 14 mOhms, a gate-source voltage range of -6 V to 6 V, and a threshold voltage (Vgs th) of 450 mV. The total gate charge (Qg) is 24.6 nC. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 1.7 W.
Feature Summary
- NexFET technology designed for ultra-low on-resistance and minimal gate charge to enhance switching efficiency.
- Ultra-thin profile with a small footprint optimized for high-density board layouts.
- Enhanced thermal performance capabilities supporting operation up to 150 °C junction temperature.
Applications
- Low-voltage DC/DC converter output stages
- Power management circuits requiring efficient P-channel switching
- Portable electronic devices with space-constrained PCB layouts
Procurement Notes
Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before procurement. Confirm that the DSBGA-9 package dimensions align with your PCB footprint requirements. Ensure that the supply chain source provides authentic Texas Instruments components to guarantee reliability and compliance with RoHS standards.
Selection Notes
Select this component when designing low-voltage systems requiring a compact P-channel solution with high current handling capability. The 14 mOhm on-resistance makes it suitable for applications prioritizing conduction loss reduction. Consider the 5 A current rating and 8 V voltage limit to ensure adequate headroom for your specific load conditions and operating environment.
Part Context
This part belongs to the CSD22204W series of NexFET Power MOSFETs from Texas Instruments. The series focuses on delivering high performance in extremely small packages, specifically targeting modern electronics where size and efficiency are critical constraints. The CSD22204WT variant specifically denotes the reel packaging configuration for automated assembly processes.
Replacement Considerations
Consult official Texas Instruments documentation for verified cross-reference part numbers. Do not substitute based solely on generic parameter matching without confirming pinout compatibility and thermal characteristics.
