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Product Detailed Parameters
- Description：MOSFET P-CH 8V 7.4A 4PICOSTAR
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9.9mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.5 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：1390 pF @ 4 V
- FET Feature：-
- Power Dissipation (Max)：600mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-PICOSTAR
- Package / Case：4-XFLGA
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Overview
The CSD22205LT is a NexFET P-channel power MOSFET manufactured by Texas Instruments. It features an 8V drain-source voltage rating and supports a continuous drain current of 7.4A at ambient temperature. The device exhibits a maximum on-resistance of 9.9mΩ at 1A and 4.5V gate-source voltage, with a gate charge of 8.5nC at 4.5V. It utilizes a 4-XFLGA surface-mount package and offers a maximum power dissipation of 600mW. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Ultra-thin profile with small outline dimensions for space-constrained designs
- Optimized for low on-resistance and minimal gate charge to enhance efficiency
- Superior thermal performance characteristics for effective heat dissipation
Applications
- Battery protection circuits in portable devices
- Load switches for low-voltage systems
- Power management modules requiring compact form factors
Procurement Notes
Verify the specific ordering suffix against official Texas Instruments documentation to ensure correct packaging configuration. Confirm that the requested variant matches the required tape and reel or cut tape specifications. Cross-reference the manufacturer part number with the latest datasheet revision to validate electrical parameters and pinout compatibility before finalizing procurement orders.
Selection Notes
Select this component when system requirements demand a P-channel MOSFET with an 8V breakdown voltage and high current handling capability in a miniature footprint. The low gate charge facilitates faster switching speeds, while the thin package design aids in minimizing board space usage. Ensure the application environment remains within the specified operating temperature range to maintain reliability.
Part Context
This device belongs to the NexFET family of power MOSFETs from Texas Instruments. The series is characterized by its ultra-thin construction and optimized electrical performance for modern portable electronics. The CSD22205LT specifically targets applications needing efficient power control in limited physical spaces.
Replacement Considerations
Consult official substitution guides for compatible NexFET P-channel MOSFETs with matching voltage and current ratings. Verify package compatibility and thermal characteristics before implementing any alternative components.
