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Product Detailed Parameters
- Description：MOSFET P-CH 8V 5A 9DSBGA
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：5.7mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.6 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：2275 pF @ 4 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：9-DSBGA
- Package / Case：9-UFBGA, DSBGA
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Overview
The CSD22206W is an 8-V P-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a DSBGA-9 surface-mount package and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a drain-source breakdown voltage (Vds) of 8 V, a continuous drain current (Id) of 5 A, and a maximum on-resistance (Rds(on)) of 9.1 mΩ. The device supports gate-source voltages up to ±6 V with a threshold voltage of 1.05 V. Gate charge is specified at 14.6 nC, with rise and fall times of 17 ns and 45 ns respectively. Maximum power dissipation is rated at 1.7 W.
Feature Summary
- Utilizes NexFET technology for enhanced power efficiency in low-voltage applications.
- Provides single-channel enhancement-mode operation for precise switching control.
- Designed for high thermal stability with extended operating temperature capabilities.
Applications
- Low-voltage DC-DC converter circuits
- Power management systems requiring efficient P-channel switching
- Battery-powered portable devices
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm that the component meets all required RoHS compliance standards for your target market. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring an 8-V P-Channel MOSFET with low on-resistance. Ensure the application voltage does not exceed the 8-V drain-source rating. Consider the DSBGA-9 package constraints for PCB layout and thermal management requirements relative to the 1.7-W power dissipation limit.
Part Context
This component belongs to the CSD22206W series of NexFET Power MOSFETs from Texas Instruments. It is categorized under discrete semiconductors, specifically transistors. The product line focuses on providing optimized performance for synchronous rectification and load switch applications in compact form factors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components based on matching electrical parameters and pin configurations through official manufacturer cross-reference tools.
