CSD23202W10T

$1.07

Description：MOSFET P-CH 12V 2.2A 4DSBGA
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7aa83af01e9e Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 2.2A 4DSBGA
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：53mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.8 nC @ 4.5 V
Vgs (Max)：-6V
Input Capacitance (Ciss) (Max) @ Vds：512 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：4-DSBGA (1x1)
Package / Case：4-UFBGA, DSBGA

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CSD23202W10T

Overview

The CSD23202W10T is a single-channel P-Channel MOSFET from the NexFET A series, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a DSBGA-4 (4-UFBGA, 1x1) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 12 V and a continuous drain current of 2.2 A at ambient temperature. The device features a maximum on-resistance of 92 mOhms and a gate threshold voltage of 600 mV. Operating characteristics specify a gate-source voltage range of -6 V to 6 V, with a total gate charge of 2.9 nC. Power dissipation is rated at 1 W, and the junction temperature range spans from -55 °C to +150 °C.

Feature Summary

NexFET A series technology optimized for low on-resistance performance
Enhancement mode P-Channel configuration for single-channel switching applications
Compact 4-pin DSBGA footprint designed for space-constrained surface-mount designs

Applications

Low-voltage power management circuits
Battery protection systems
Load switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging format and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the full part number with the latest datasheet revision to validate all electrical parameters and thermal characteristics match the design intent.

Selection Notes

Select this component for applications requiring a compact P-Channel switch with a 12 V rating. Ensure the drive voltage aligns with the specified gate threshold and on-resistance conditions. Evaluate the thermal performance within the 1 W dissipation limit and verify that the operating temperature range meets the environmental constraints of the target system.

Part Context

This component belongs to the CSD23202W10 family of discrete semiconductors produced by Texas Instruments. It is classified as a single FET MOSFET within the broader transistor category. The NexFET branding indicates a specific product line focused on power efficiency and integration for modern electronic devices.