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Product Detailed Parameters
- Description：MOSFET P-CH 8V 3A 6DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：19.4mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：914 pF @ 4 V
- FET Feature：-
- Power Dissipation (Max)：750mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-DSBGA (1x1.5)
- Package / Case：6-UFBGA, DSBGA
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Overview
The CSD23203W is an 8-V P-Channel NexFET Power MOSFET manufactured by Texas Instruments. This component utilizes advanced silicon gate technology to deliver high switching performance and low on-resistance, making it suitable for power management applications requiring efficient current handling within an 8-volt system.
Feature Summary
- P-Channel configuration for high-side switching
- NexFET technology for optimized performance
- Silicon gate design for reliability
Applications
- Power management circuits
- Battery protection systems
- DC-DC converter stages
Procurement Notes
Verify the specific package variant and tape-and-reel specifications against the official datasheet before ordering. Confirm that the 8-V rating aligns with your system voltage requirements. Ensure compatibility with your PCB footprint and thermal management strategy during the procurement phase.
Selection Notes
Select this component when an 8-V rated P-Channel MOSFET is required for high-efficiency switching. Consider its NexFET characteristics for improved thermal performance compared to standard silicon devices. Validate that the package type meets your assembly constraints and that the voltage rating provides sufficient headroom for your application.
Part Context
This device belongs to the NexFET family of power MOSFETs from Texas Instruments. It is designed to replace older generation discrete solutions in compact power designs. The part is intended for use in portable electronics and industrial equipment where space and efficiency are critical factors.
Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage class if supply chain issues arise. Verify that any substitute maintains the P-Channel topology and similar on-resistance values to ensure circuit functionality remains unchanged.
