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Product Detailed Parameters
- Description：MOSFET P-CH 8V 3A 6DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：19.4mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：914 pF @ 4 V
- FET Feature：-
- Power Dissipation (Max)：750mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-DSBGA (1x1.5)
- Package / Case：6-UFBGA, DSBGA
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Overview
The CSD23203WT is an 8 V P-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 6-pin DSBGA (1x1.5 mm) surface-mount package with dimensions of 1.5 mm length, 1 mm width, and 0.625 mm height. The device supports a continuous drain current of 3 A at Ta and dissipates 750 mW at Ta. Key electrical characteristics include a rise time of 12 ns and a fall time of 27 ns. It utilizes Silicon technology in an enhancement channel mode.
Feature Summary
- Utilizes NexFET technology for optimized power performance
- Designed for surface-mount applications in compact form factors
- Enhancement mode P-Channel operation
Applications
- Power management circuits requiring low-voltage switching
- Portable electronic devices with space constraints
- Battery-powered systems utilizing P-Channel MOSFETs
Procurement Notes
Verify the specific suffix 'WT' against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Ensure the requested quantity aligns with standard reel sizes defined in the datasheet. Cross-reference the part number with authorized distributors to confirm availability and authenticity. Check for any updated revision levels or alternate pin configurations before finalizing procurement orders.
Selection Notes
Select this component when an 8 V rated P-Channel MOSFET is required for low-power switching applications. The 6-DSBGA package is suitable for designs prioritizing minimal board space. Verify that the 3 A current rating and 750 mW power dissipation meet the thermal and load requirements of the target circuit. Consider the 12 ns rise time for high-speed switching needs within the voltage limits.
Part Context
This component belongs to the NexFET family of power MOSFETs from Texas Instruments, designed for efficient power conversion. The CSD23203W series focuses on low-voltage applications, offering enhanced performance compared to standard silicon devices. The WT suffix typically indicates specific packaging or handling characteristics defined by the manufacturer for automated assembly processes.
Replacement Considerations
Consult the official Texas Instruments substitution guide for verified alternatives. Ensure any substitute matches the 8 V rating, P-Channel type, and 6-DSBGA footprint. Verify compatibility with existing thermal and electrical constraints before replacing.
