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Product Detailed Parameters
- Description：MOSFET P-CH 12V 1.8A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：116mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.23 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：234 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD23280F3T is a -12-V P-Channel FemtoFET MOSFET from Texas Instruments. It features an ultra-small footprint of 0.73 mm × 0.64 mm and an ultra-low profile. The device supports a high-operating drain current of 1.8 A at Ta. Key electrical characteristics include low on-resistance and ultra-low gate charge (Qg) and reverse transfer charge (Qgd). It is designed for surface mount applications with a maximum power dissipation of 500 mW at Ta.
Feature Summary
- Ultra-small footprint measuring 0.73 mm by 0.64 mm
- Ultra-low profile construction
- Low on-resistance capability
- Ultra-low gate charge and reverse transfer charge
Applications
- Portable electronic devices requiring minimal board space
- Battery-powered systems utilizing P-channel switching
- Power management circuits in compact consumer electronics
Procurement Notes
Verify the exact part number suffix, as CSD23280F3T indicates the tape and reel packaging variant. Confirm that the required voltage rating of -12 V and current handling of 1.8 A align with your specific circuit design requirements. Ensure compatibility with surface mount assembly processes given the small package dimensions. Cross-reference official datasheets for thermal performance data under your specific operating conditions.
Selection Notes
Select this component when board area is critically constrained due to its sub-millimeter footprint. Consider it for applications demanding fast switching speeds where low gate charge reduces driver losses. Evaluate the -12 V rating against system voltage peaks. Compare thermal resistance values if high current density is expected. Ensure the P-channel topology fits the control logic requirements of the target application.
Part Context
This device belongs to Texas Instruments' FemtoFET series, which focuses on miniaturization for portable electronics. It complements N-channel counterparts in bridge configurations or single-ended switches. The technology leverages advanced silicon processes to achieve high current density in tiny packages, supporting trends toward smaller form factors in modern mobile and wearable devices.
Replacement Considerations
Check for direct pin-compatible alternatives within the same -12 V P-Channel family. Verify that substitute components maintain similar Qg and Rds(on) values to ensure equivalent switching performance. Confirm package dimensions match the 0.73 mm x 0.64 mm footprint to avoid PCB layout changes.
