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Product Detailed Parameters
- Description：MOSFET P-CH 12V 2.3A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：175mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.14 nC @ 6 V
- Vgs (Max)：-8V
- Input Capacitance (Ciss) (Max) @ Vds：236 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD23381F4T is a 12-V P-Channel FemtoFET MOSFET from Texas Instruments. It features an ultra-low on-resistance of 175 mΩ and supports a drain current of 2.3 A with a peak pulsed current of 9 A. The device operates with gate voltages between -8 V and +8 V, utilizing a threshold voltage of 700 mV. Key electrical characteristics include a gate charge of 1.14 nC, a typical turn-on delay of 4.5 ns, and a turn-off delay of 18 ns. Power dissipation is rated at 500 mW. The component is housed in a compact 3-PICOSTAR package measuring 1.0 mm x 0.6 mm x 0.35 mm.
Feature Summary
- Ultra-small footprint design utilizing the 3-PICOSTAR package for space-constrained applications
- High operating drain current capability supporting demanding load requirements
- Ultra-low gate charge (Qg) to minimize switching losses and drive power consumption
Applications
- Portable consumer electronics requiring minimal board space
- Battery-powered devices optimizing for low power consumption
- DC-DC converter input/output stages
Procurement Notes
Verify the specific ordering suffix 'F4T' to ensure the correct tape-and-reel packaging configuration is obtained. Confirm that the 3-PICOSTAR package dimensions align with your PCB footprint constraints. Cross-reference the manufacturer part number against official Texas Instruments documentation to validate authenticity and revision status before procurement.
Selection Notes
Select this component when board area is limited to a 0402 equivalent size but higher current handling than standard small-signal MOSFETs is required. The 12-V rating suits low-voltage logic interfaces. Ensure the application can accommodate the specific thermal dissipation limits of the PICOSTAR package under continuous operation conditions.
Part Context
This part belongs to Texas Instruments' FemtoFET family, which focuses on miniaturization without sacrificing performance. The CSD23381 series represents a progression in integrating high-current capabilities into extremely small surface-mount packages, targeting the growing demand for compact power management solutions in modern portable hardware.
Replacement Considerations
Direct substitutes may include other 12-V P-Channel MOSFETs in 3-pin SOT-353 or similar micro-packages from manufacturers like ON Semiconductor or Vishay. Verify pinout compatibility and thermal resistance values carefully when considering alternatives.
