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Product Detailed Parameters
- Description：MOSFET P-CH 12V 3.5A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：76mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.35 nC @ 6 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：235 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD23382F4 is a single-channel P-Channel MOSFET from the NexFET family, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a PICOSTAR-3 surface-mount package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 12 V and a continuous drain current (Id) of 3.5 A. The device features a maximum on-resistance (Rds On) of 199 mOhms at a gate-source voltage of -4.5 V. Gate threshold voltage (Vgs th) is specified at 1.1 V, with a total gate charge (Qg) of 1.04 nC. Operating temperatures range from -55 °C to +150 °C, with a power dissipation rating of 500 mW.
Feature Summary
- NexFET technology optimized for low gate charge and fast switching performance
- Enhancement-mode P-Channel configuration for high-side load switching applications
- PICOSTAR-3 package designed for compact board space and efficient thermal management
Applications
- DC-DC converter output rectification
- Low-voltage load switch circuits
- Battery protection modules
Procurement Notes
Verify the specific suffix 'F4' corresponds to the required tape-and-reel packaging quantity and handling specifications. Confirm RoHS compliance status through the official datasheet or manufacturer documentation prior to integration. Ensure the ordering part number matches the exact pinout and thermal pad requirements of the target PCB footprint.
Selection Notes
Select this component when a 12 V P-Channel MOSFET with low Rds On is required for space-constrained designs. The PICOSTAR-3 package offers a small outline suitable for dense layouts. Compare Qg and switching times against system efficiency targets. Ensure the gate drive voltage aligns with the -4.5 V specification for optimal conduction characteristics.
Part Context
This device belongs to the CSD23382 series of NexFET power MOSFETs. The series focuses on improving power density and efficiency in portable electronics and industrial control systems. The F4 suffix typically denotes specific packaging and reel configurations provided by Texas Instruments for automated assembly processes.
Replacement Considerations
Consult the official Texas Instruments replacement guide for verified cross-reference part numbers. Do not assume functional compatibility with other P-Channel MOSFETs without verifying pinout, voltage ratings, and thermal characteristics.
