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Product Detailed Parameters
- Description：MOSFET P-CH 20V 4A 9DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：26mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.5 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：1010 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：9-DSBGA
- Package / Case：9-UFBGA, DSBGA
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Overview
The CSD25202W15T is a single-channel P-Channel enhancement mode MOSFET from the NexFET series, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a 9-DSBGA surface-mount package. The device supports a drain-source voltage of 20 V and delivers a continuous drain current of 4 A at ambient temperature. Key electrical characteristics include a maximum on-resistance of 52 mΩ and a gate charge of 5.8 nC. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 500 mW.
Feature Summary
- Single-channel P-Channel configuration for efficient power switching
- NexFET technology optimized for low on-resistance performance
- Ultra-small 9-DSBGA footprint suitable for space-constrained designs
Applications
- Mobile phone battery protection circuits
- Tablet PC power management systems
- Portable electronic device load switches
Procurement Notes
Verify the specific ordering suffix 'T' corresponds to the required tape and reel packaging format. Confirm that the 9-DSBGA pinout matches the target PCB layout requirements. Ensure compliance with RoHS directives and check for any specific moisture sensitivity level handling instructions during assembly.
Selection Notes
Select this component when a compact P-Channel switch is needed for 20 V applications. The 4 A current rating and low Rds(on) make it suitable for portable devices. Compare against other NexFET variants if higher current or different voltage ratings are required. Verify thermal management capabilities given the small package size.
Part Context
This part belongs to the Texas Instruments NexFET family, which focuses on high-performance power MOSFETs for portable electronics. The CSD25202W15T specifically targets mobile and tablet applications where board space is limited. It complements other TI power management solutions like LDOs and PMUs for complete system integration.
Replacement Considerations
Direct substitutes may include other Texas Instruments P-Channel MOSFETs in similar packages, such as the CSD25304W1015T, provided voltage and current ratings meet design requirements. Always verify pin compatibility and electrical parameters before substitution.
