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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3.2A 6DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：33mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.1 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：570 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-DSBGA (1x1.5)
- Package / Case：6-UFBGA, DSBGA
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Overview
The CSD25211W1015 is a P-Channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a DSBGA-6 surface-mount package. The device supports a drain-source voltage of 20 V and delivers a continuous drain current of 14 A. Key electrical characteristics include an on-resistance of 8.3 mΩ at -4.5 V gate-source voltage and a threshold voltage ranging from 0.4 V to 1.1 V. The component operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 4.7 W.
Feature Summary
- NexFET technology for enhanced switching performance
- Low on-resistance for efficient power handling
- Surface-mount DSBGA-6 packaging for compact integration
Applications
- DC-DC converter circuits
- Power management modules
- Load switch applications
Procurement Notes
Verify the specific suffix and revision level against the official Texas Instruments datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and manufacturing origin details directly with authorized distributors or the manufacturer before finalizing procurement orders.
Selection Notes
Select this component for designs requiring a 20 V P-Channel MOSFET with low on-resistance in a small footprint. Ensure thermal management strategies account for the 4.7 W power dissipation limit in the DSBGA-6 package. Verify gate drive voltage compatibility with the specified threshold and on-resistance conditions.
Part Context
This part belongs to the NexFET family of power MOSFETs from Texas Instruments, designed for high-efficiency power conversion applications. The series emphasizes low on-resistance and fast switching capabilities within compact surface-mount packages suitable for modern electronic systems.
Replacement Considerations
Consult the official datasheet for direct pin-compatible alternatives within the same NexFET family. Verify that any substitute maintains identical voltage, current, and thermal specifications.
