CSD25310Q2T

$0.55

Description：MOSFET P-CH 20V 20A 6WSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:81c941c073c0 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 20A 6WSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：23.9mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：655 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.9W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-WSON (2x2)
Package / Case：6-WDFN Exposed Pad

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CSD25310Q2T

Overview

The CSD25310Q2T is a single-channel P-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a WSON-6 surface-mount package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 20 V, a continuous drain current (Id) of 20 A, and a maximum on-resistance (Rds(on)) of 19.9 mΩ. The device supports gate-source voltages ranging from -8 V to +8 V with a threshold voltage (Vgs(th)) of 1.1 V. It features a gate charge (Qg) of 4.7 nC, a power dissipation (Pd) of 2.9 W, and an operating temperature range from -55°C to +150°C.

Feature Summary

NexFET technology designed for low conduction losses and high efficiency
Enhancement mode P-channel configuration for single-channel control
WSON-6 compact surface-mount packaging for space-constrained designs

Applications

Low-voltage DC-DC converter circuits
Power management modules requiring P-channel switching
Battery protection and load switch applications

Procurement Notes

Verify the specific ordering suffix 'T' corresponds to the required tape-and-reel packaging format. Confirm that the WSON-6 footprint matches the target PCB layout dimensions. Ensure thermal management strategies account for the 2.9 W power dissipation rating under expected load conditions. Cross-reference the datasheet revision date to ensure compatibility with design requirements.

Selection Notes

Select this component when a 20 V P-channel MOSFET with high current capability is required. The low Rds(on) of 19.9 mΩ makes it suitable for applications prioritizing efficiency over voltage headroom. Consider the WSON-6 package size constraints and the need for surface-mount assembly processes. Evaluate thermal performance based on the specified power dissipation and ambient operating temperatures.

Part Context

This part belongs to the Texas Instruments NexFET family, which focuses on optimizing power loss in small packages. The CSD25310Q2T specifically addresses the need for robust P-channel switching in low-voltage environments. Its design integrates advanced silicon process technology to achieve high performance within a minimal footprint, supporting modern portable and industrial electronics.