CSD25401Q3

$1.16

Description：MOSFET P-CH 20V 14A/60A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d9253e2a24e3 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 14A/60A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：11.7mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSON-CLIP (3.3x3.3)
Package / Case：8-PowerTDFN

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CSD25401Q3

Overview

The CSD25401Q3 is a P-channel NexFET power MOSFET designed for load management applications. It features an 8-pin SON 3x3 plastic package with dimensions of 3.3mm x 3.3mm and a height of 1.1mm. The device supports a drain-to-source voltage (VDS) of -20 V and continuous drain current (ID) of -60 A at 25°C case temperature. Key electrical parameters include a maximum on-state resistance (RDS(on)) of 18.2 mΩ at VGS = -2.5 V, and a total gate charge (Qg) of 8.8 nC at 4.5 V. Thermal performance includes a junction-to-ambient thermal resistance (θJA) of 42.0 °C/W.

Feature Summary

Ultra-low gate charge (Qg) and gate-to-drain charge (Qgd) to minimize switching losses
Low thermal resistance for efficient heat dissipation in compact designs
Low RDS(on) optimized for high-efficiency power conversion
Pb-free terminal plating and RoHS compliant construction

Applications

DC-DC Converters
Battery Management Systems
Load Switches
Battery Protection Circuits

Procurement Notes

Verify the component against the official Texas Instruments datasheet SLPS211C to confirm specifications. Ensure the ordering suffix matches the required tape and reel quantity of 2500 units. Confirm that the device meets Pb-free and RoHS compliance requirements as stated in the product summary. Check for any specific handling instructions related to the SON package during assembly.

Selection Notes

Select this component for applications requiring low on-resistance and fast switching speeds within a 20 V limit. The 8-pin SON package provides excellent thermal performance relative to its small footprint. Consider the threshold voltage range (-0.6 V to -1.2 V) when designing gate drive circuits. Evaluate the thermal resistance metrics based on the specific PCB copper area and layout used in the target application.

Part Context

This part belongs to the NexFET family of power MOSFETs from Texas Instruments. It is specifically engineered to reduce losses in power conversion load management. The device utilizes a plastic SON package to offer superior thermal characteristics compared to traditional packages of similar size. It is intended for use in portable electronics and battery-powered systems where space and efficiency are critical constraints.