CSD25402Q3A

Overview

The CSD25402Q3A is a 20 V P-Channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and operates in enhancement mode with a single channel configuration. The device features a WSON-6 surface-mount package, supporting continuous drain currents up to 20 A and a maximum power dissipation of 2.9 W. Key electrical parameters include a low on-resistance of 19.9 mΩ, a gate charge of 4.7 nC, and a threshold voltage of 1.1 V. It withstands gate-source voltages of ±8 V and functions within a temperature range of -55 °C to +150 °C.

Feature Summary

• NexFET technology designed for minimized conduction losses
• Low on-resistance for high efficiency
• Compact WSON-6 footprint

Applications

• Power conversion applications
• Load management systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current datasheet to confirm packaging details such as reel or cut tape availability. Confirm RoHS compliance status directly from the official documentation before procurement. Ensure the component matches the required pinout and thermal characteristics for the intended PCB layout design.

Selection Notes

Select this component for designs requiring a 20 V P-channel switch with high current handling capabilities. The low on-resistance makes it suitable for applications prioritizing efficiency. Verify that the gate drive voltage aligns with the specified ±8 V limit and ensure adequate thermal management for the 2.9 W dissipation rating.

Part Context

This part belongs to the NexFET family of power MOSFETs from Texas Instruments. The series focuses on reducing power loss in switching applications. The CSD25402Q3A specifically targets low-voltage, high-current scenarios where compact size and fast switching are beneficial.

Replacement Considerations

Public confirmed substitute part numbers: CSD25310Q2.