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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1.7A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：132mOhm @ 400mA, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.91 nC @ 4.5 V
- Vgs (Max)：-12V
- Input Capacitance (Ciss) (Max) @ Vds：155 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD25480F3T is a single-channel P-Channel enhancement-mode MOSFET from Texas Instruments, utilizing the Femto FET technology and housed in a PICOSTAR-3 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 1.7 A. The device exhibits a maximum on-resistance of 840 mOhms at 10 V gate drive. Key electrical characteristics include a gate threshold voltage of 950 mV, total gate charge of 700 pC, and power dissipation of 500 mW. Operating temperatures range from -55 °C to +150 °C junction temperature.
Feature Summary
- Single-channel P-Channel configuration for efficient low-side or high-side switching applications
- Enhancement mode operation with defined gate threshold voltage for reliable logic interfacing
- PICOSTAR-3 surface-mount packaging designed for compact board space utilization
Applications
- Battery protection circuits requiring low on-resistance
- DC-DC converter synchronous rectification stages
- Load switch implementations in portable electronic devices
Procurement Notes
Verify the specific suffix 'T' indicates tape-and-reel packaging when ordering. Confirm the exact part number matches the datasheet specifications for the PICOSTAR-3 footprint. Ensure compatibility with the required thermal management solutions for the 500 mW power dissipation rating during operation.
Selection Notes
Select this component for applications demanding a balance between low conduction losses and minimal footprint. The 20 V rating suits systems operating below this threshold. Consider the 840 mOhm resistance for efficiency calculations. Verify that the gate drive voltage aligns with the specified parameters for optimal performance.
Part Context
This device belongs to the CSD25480 series of NexFET power MOSFETs. It is manufactured by Texas Instruments using silicon technology. The product line focuses on providing high-performance switching capabilities in ultra-small packages suitable for modern consumer electronics and industrial control systems.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing the original component.
