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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1.7A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：132mOhm @ 400mA, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.91 nC @ 10 V
- Vgs (Max)：-12V
- Input Capacitance (Ciss) (Max) @ Vds：155 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD25480F3T is a single-channel P-Channel enhancement mode MOSFET from Texas Instruments' Femto FET series. It features a PICOSTAR-3 surface-mount package with dimensions of 1 mm x 0.6 mm x 0.35 mm. Key electrical parameters include a drain-source breakdown voltage (Vds) of 20 V, a continuous drain current (Id) of 1.7 A, and a maximum on-resistance (Rds(on)) of 840 mΩ. The device operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 500 mW.
Feature Summary
- Ultra-small footprint utilizing the PICOSTAR-3 package for high-density PCB layouts
- Enhanced switching performance with low gate charge characteristics
- Robust thermal operation capability up to 150°C junction temperature
Applications
- Portable consumer electronics requiring minimal board space
- Battery-powered devices needing efficient power management
- DC-DC converter circuits in compact form factors
Procurement Notes
Verify the specific ordering suffix 'F3T' against the manufacturer's latest datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment due to the small PICOSTAR-3 outline. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Selection Notes
Select this component when board area is constrained and a P-Channel switch is required for low-voltage applications. Compare the 840 mΩ on-resistance against circuit loss requirements. Consider the 1.7 A current limit relative to peak load demands. Evaluate the 20 V voltage rating to ensure adequate headroom for the target supply voltage.
Part Context
This part belongs to the CSD25480F3 series, designed as a low-cost, high-performance solution for space-sensitive applications. It complements other Femto FET devices by offering a balance of switching speed and conduction efficiency in an industry-standard tiny outline package suitable for modern miniaturized electronic designs.
Replacement Considerations
Check for direct pin-compatible alternatives within the same NexFET family that may offer lower Rds(on). Verify if upgraded packages or higher current variants are available for future-proofing designs without altering the PCB layout.
