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Product Detailed Parameters
- Description：MOSFET P-CH 20V 2.5A 3PICOSTAR
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：88mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.913 nC @ 4.5 V
- Vgs (Max)：-12V
- Input Capacitance (Ciss) (Max) @ Vds：189 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD25481F4 is a P-channel enhancement-mode power MOSFET from Texas Instruments' FemtoFET series. It features a 20 V drain-source voltage rating and supports a continuous drain current of 2.5 A. The device utilizes the PICOSTAR-3 surface-mount package, measuring 1 mm by 0.6 mm with a height of 0.35 mm. Key electrical characteristics include a maximum on-resistance of 800 mΩ and a gate threshold voltage ranging from 700 mV to 1.2 V. It operates within a temperature range of -55 °C to +150 °C junction temperature.
Feature Summary
- Ultra-small footprint enabled by the PICOSTAR-3 package for high-density board layouts
- Low gate charge and fast switching speeds suitable for efficient power management
- Enhanced mode operation optimized for low-voltage DC-DC conversion applications
Applications
- Portable consumer electronics requiring minimal component space
- Battery-powered devices utilizing low-voltage power regulation
- Point-of-load (POL) DC/DC converter stages
Procurement Notes
Verify the specific ordering suffix to confirm packaging configuration, as variations exist between tape-and-reel and cut-tape formats. Ensure compliance with RoHS directives and check for lead-free status if required by assembly standards. Confirm the active lifecycle status directly with Texas Instruments or authorized distributors before finalizing procurement plans.
Selection Notes
Select this component when strict spatial constraints necessitate the PICOSTAR-3 package while maintaining a 20 V voltage rating. Evaluate the 800 mΩ on-resistance against thermal dissipation requirements at the target load current. Consider the 2.5 A continuous current capability relative to system peak demands and ambient operating temperatures.
Part Context
This part belongs to the FemtoFET family, designed specifically for ultra-compact power solutions. It complements other low-voltage MOSFETs in the CSD series, offering a balance of performance and size. The technology focuses on reducing parasitic effects through advanced packaging and silicon optimization.
Replacement Considerations
Cross-reference with CSD25481W4 for alternative packaging options within the same electrical specification. Verify pinout compatibility and thermal characteristics when substituting with other 20 V P-channel MOSFETs from different manufacturers.
