CSD25481F4T

CSD25481F4T

$0.95
  • Description:MOSFET P-CH 20V 2.5A 3PICOSTAR
  • Series:FemtoFET™
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)

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Product Detailed Parameters

  • Description:MOSFET P-CH 20V 2.5A 3PICOSTAR
  • Series:FemtoFET™
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:88mOhm @ 500mA, 8V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.91 nC @ 4.5 V
  • Vgs (Max):-12V
  • Input Capacitance (Ciss) (Max) @ Vds:189 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-PICOSTAR
  • Package / Case:3-XFDFN

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CSD25481F4T

Overview

The CSD25481F4T is a P-channel enhancement-mode MOSFET from Texas Instruments' FemtoFET series. It features a PICOSTAR-3 surface-mount package with dimensions of 1.04 mm length, 0.64 mm width, and 0.35 mm height. Key electrical parameters include a drain-source voltage (Vds) of 20 V, continuous drain current (Ids) of 2.5 A, and maximum power dissipation of 500 mW. The device exhibits an on-resistance (Rds(on)) of 800 mΩ, gate threshold voltage ranging from 0.7 V to 1.2 V, and typical gate charge of 0.913 nC at 4.5 V. Operating temperature spans -55 °C to +150 °C.

Feature Summary

  • Ultra-small PICOSTAR-3 footprint designed for space-constrained portable applications
  • Enhanced switching performance with low input capacitance and fast rise/fall times
  • Robust thermal management capability within a compact surface-mount package

Applications

  • Portable consumer electronics requiring minimal board space
  • Battery-powered devices utilizing low-voltage power paths
  • General-purpose low-side or high-side switching in compact systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested variant matches the required tape-and-reel specifications for automated assembly processes. Cross-reference the component marking with the datasheet to validate authenticity and traceability before integration into production lines.

Selection Notes

Select this component when design constraints demand the smallest possible surface-mount footprint for P-channel switching applications. Evaluate the 20 V rating and 2.5 A current capacity against system load requirements. Consider the thermal dissipation limits and operating temperature range to ensure reliability under expected environmental conditions without additional heatsinking.

Part Context

This device belongs to Texas Instruments' FemtoFET family, which prioritizes miniaturization through advanced packaging technologies. The PICOSTAR-3 package represents a significant reduction in physical size compared to traditional SOT-23 packages, enabling higher component density in modern mobile and wearable electronic designs.

Replacement Considerations

Consult official substitution guides for compatible NexFET or FemtoFET series alternatives with matching pinouts and electrical characteristics.

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