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The CSD25481F4T is a P-channel enhancement-mode MOSFET from Texas Instruments' FemtoFET series. It features a PICOSTAR-3 surface-mount package with dimensions of 1.04 mm length, 0.64 mm width, and 0.35 mm height. Key electrical parameters include a drain-source voltage (Vds) of 20 V, continuous drain current (Ids) of 2.5 A, and maximum power dissipation of 500 mW. The device exhibits an on-resistance (Rds(on)) of 800 mΩ, gate threshold voltage ranging from 0.7 V to 1.2 V, and typical gate charge of 0.913 nC at 4.5 V. Operating temperature spans -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested variant matches the required tape-and-reel specifications for automated assembly processes. Cross-reference the component marking with the datasheet to validate authenticity and traceability before integration into production lines.
Select this component when design constraints demand the smallest possible surface-mount footprint for P-channel switching applications. Evaluate the 20 V rating and 2.5 A current capacity against system load requirements. Consider the thermal dissipation limits and operating temperature range to ensure reliability under expected environmental conditions without additional heatsinking.
This device belongs to Texas Instruments' FemtoFET family, which prioritizes miniaturization through advanced packaging technologies. The PICOSTAR-3 package represents a significant reduction in physical size compared to traditional SOT-23 packages, enabling higher component density in modern mobile and wearable electronic designs.
Consult official substitution guides for compatible NexFET or FemtoFET series alternatives with matching pinouts and electrical characteristics.