ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 20V 3.2A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：35mOhm @ 900mA, 8V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 4.5 V
- Vgs (Max)：-12V
- Input Capacitance (Ciss) (Max) @ Vds：533 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
Download product information
Overview
The CSD25485F5 is a P-channel power MOSFET from Texas Instruments' FemtoFET series, housed in a compact 3-PICOSTAR surface-mount package. It features a drain-source voltage rating of 20 V and a continuous drain current of 5.3 A at 25°C. The device exhibits a maximum on-resistance of 35 mΩ at 8 V gate drive and 900 mA drain current. Key electrical characteristics include a gate charge of 3.5 nC at 4.5 V and an input capacitance of 533 pF at 10 V. It operates within a junction temperature range of -55°C to 150°C with a maximum power dissipation of 1.4 W.
Feature Summary
- Ultra-low gate charge for enhanced switching efficiency
- Compact 3-PICOSTAR footprint for space-constrained designs
- Low on-resistance optimized for high-current applications
Applications
- Mobile device power management systems
- Portable consumer electronics battery protection
- High-density DC-DC converter output stages
Procurement Notes
Verify the specific ordering suffix matches the required packaging format, such as tape and reel or cut tape, as these affect handling but not electrical function. Confirm RoHS3 compliance status for environmental regulations. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability. Check for any recent product change notices that may impact long-term availability or specifications.
Selection Notes
Select this component when a small form factor is critical alongside moderate voltage ratings. The low gate charge makes it suitable for high-frequency switching applications where driver loss is a concern. Compare against N-channel alternatives if polarity requirements differ. Ensure the thermal design accommodates the 1.4 W dissipation limit under worst-case operating conditions.
Part Context
This part belongs to the FemtoFET family, designed specifically for ultra-small footprints in portable devices. It complements other low-voltage MOSFETs in the CSD series, offering a balance between current handling capability and physical size. The technology leverages advanced silicon processes to minimize resistance while maintaining reliability in harsh environments.
Replacement Considerations
Direct substitutes include CSD25480F3T and CSD25481F4, which share similar 20 V P-channel specifications. Verify pinout compatibility and thermal performance before substitution. Cross-reference datasheets for exact on-resistance and gate charge values to ensure circuit performance remains within acceptable limits.
