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Product Detailed Parameters
- Description：MOSFET P-CH 20V 5.3A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：35mOhm @ 900mA, 8V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 4.5 V
- Vgs (Max)：-12V
- Input Capacitance (Ciss) (Max) @ Vds：533 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD25485F5T is a P-channel enhancement mode MOSFET from the FemtoFET series, manufactured by Texas Instruments. It features a 20V drain-source voltage rating and a continuous drain current of 5.3A at 25°C. The device offers a maximum on-resistance of 35 milliohms at 8V gate drive with 900mA current. Key electrical parameters include a gate threshold voltage of 1.3V max at 250µA, gate charge of 3.5nC max at 4.5V, and input capacitance of 533pF max at 10V. It operates within a junction temperature range of -55°C to 150°C and dissipates up to 1.4W.
Feature Summary
- Ultra-low gate charge for efficient switching performance
- Low on-resistance optimized for power efficiency
- Enhanced thermal stability across wide operating temperatures
Applications
- Power management circuits
- Battery protection systems
- Load switch applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance and MSL level 1 status during sourcing. Ensure packaging matches TR, CT, or Digi-Reel specifications as required by assembly equipment. Cross-reference datasheet revisions to validate parameter consistency before integration into production designs.
Selection Notes
Select this component for low-voltage P-channel switching requirements where minimal gate charge is critical. The 3-PICOSTAR package suits space-constrained surface mount designs. Evaluate thermal dissipation capabilities against system heat loads, noting the 1.4W limit at ambient conditions. Compare on-resistance values at specific gate voltages to ensure compatibility with driver logic levels.
Part Context
This part belongs to the FemtoFET family, designed for high-efficiency surface-mount applications. It utilizes silicon technology in a compact 3-SMD, no-lead package measuring 1.49x0.73mm. The series emphasizes reduced parasitic effects and improved switching speeds compared to standard MOSFETs, targeting modern portable and industrial electronics.
Replacement Considerations
Consult official substitution guides for compatible P-channel alternatives within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics when replacing with similar packages.
