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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3.6A 3LGA
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：76mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.33 nC @ 4.5 V
- Vgs (Max)：-20V
- Input Capacitance (Ciss) (Max) @ Vds：385 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-LGA (0.73x0.64)
- Package / Case：3-XFLGA
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Overview
The CSD25501F3 is a -20V P-Channel FemtoFET™ MOSFET designed to minimize footprint in handheld and mobile applications. It features a low on-resistance of 64mΩ and operates with a continuous drain current of 3.6A at Ta. The device is housed in a compact 3-LGA package measuring 0.73mm x 0.64mm with a maximum height of 0.22mm. It includes integrated gate ESD protection and is available in tape and reel packaging.
Feature Summary
- Ultra-small footprint optimized for space-constrained designs
- Integrated gate ESD protection for enhanced reliability
- Low profile construction suitable for thin devices
Applications
- Handheld electronic devices
- Mobile phone battery packs
- Portable consumer electronics
Procurement Notes
Verify the specific ordering suffix, such as .B or T, to confirm the correct packaging configuration and marking code. Ensure the component meets RoHS compliance requirements if mandated by your design specifications. Cross-reference the datasheet revision to confirm parameter consistency before finalizing procurement.
Selection Notes
Select this component when minimizing board area is critical due to its ultra-small LGA dimensions. Consider the -20V rating and 64mΩ resistance for low-voltage power management tasks. Evaluate the thermal performance within the 0.22mm height constraint against system cooling capabilities.
Part Context
This part belongs to Texas Instruments' FemtoFET family, which focuses on reducing physical size while maintaining power efficiency. It serves as a replacement for larger standard small-signal MOSFETs in portable applications where space savings are prioritized over high-current handling.
Replacement Considerations
Check for compatible substitutes within the same voltage class and package type. Verify that alternative parts maintain similar on-resistance and footprint dimensions to ensure mechanical fit.
