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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.2A 6DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.2A
- Rds On (Max) @ Id, Vgs：120mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：265pF @ 10V
- Power - Max：750mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFBGA, DSBGA
- Supplier Device Package：6-DSBGA (1x1.5)
- Grade：-
- Qualification：-
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Overview
The CSD75205W1015 is a dual P-channel NexFET power MOSFET in a 1mm x 1.5mm wafer level package. It features a -20V drain-to-source voltage and a continuous drain current of -1.2A at 25°C. The on-state resistance (RDS(on)) ranges from 95mΩ to 145mΩ depending on the gate-to-source voltage. Total gate charge is 1.6nC at -4.5V, with a threshold voltage typically at -0.65V. Operating junction temperature spans -55°C to 150°C, and thermal resistance is 212°C/W on minimum copper.
Feature Summary
- Dual P-Channel MOSFETs in a small footprint
- Gate-Source Voltage Clamp for protection
- Built-in Gate ESD Protection rated at -3kV
- RoHS Compliant and Halogen Free
Applications
- Battery Management Systems
- Load Switch applications
- Battery Protection circuits
Procurement Notes
Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm RoHS compliance status through the supplier's declaration. Ensure the ordering suffix matches the required reel quantity of 3000 units. Validate that the device meets the specific electrical parameters required for your circuit design before finalizing the purchase order.
Selection Notes
Select this component for space-constrained battery-operated applications requiring low on-resistance. Evaluate the thermal resistance requirements based on the copper mounting area available on the PCB. Consider the -20V rating and -1.2A continuous current limits when designing the load path. Verify that the gate drive voltage aligns with the specified RDS(on) performance curves.
Part Context
This device belongs to Texas Instruments' NexFET family, designed for high efficiency and minimal footprint. It utilizes a wafer level package technology to achieve an ultra-low profile. The common source configuration allows for efficient switching in dual-channel applications. It serves as a compact solution for modern portable electronics and battery-powered devices.
Replacement Considerations
Check for direct pin-compatible alternatives within the same NexFET series. Verify that any substitute maintains the -20V VDS rating and similar RDS(on) characteristics. Ensure the replacement package dimensions match the 1mm x 1.5mm form factor. Confirm that the thermal performance metrics are comparable for your specific application.
