CSD75208W1015T

CSD75208W1015T

$0.99
  • Description:MOSFET 2P-CH 20V 1.6A 6DSBGA
  • Series:NexFET™

SKU:f50c170cb0f3 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 1.6A 6DSBGA
  • Series:NexFET™
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual) Common Source
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:1.6A
  • Rds On (Max) @ Id, Vgs:68mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:410pF @ 10V
  • Power - Max:750mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UFBGA, DSBGA
  • Supplier Device Package:6-DSBGA (1x1.5)
  • Grade:-
  • Qualification:-

Download product information

CSD75208W1015T

Overview

The CSD75208W1015T is a dual P-channel NexFET power MOSFET manufactured by Texas Instruments. It features a DSBGA-6 surface-mount package with a footprint of 1x1.5 mm. The device supports a drain-source voltage (Vds) of 20 V and delivers a continuous drain current (Id) of 1.6 A at 25°C. Key electrical parameters include an on-resistance (Rds(on)) ranging from 150 mΩ to 285 mΩ, a gate charge (Qg) of 1.9 nC, and a threshold voltage (Vgs(th)) of 800 mV. Operating temperatures range from -55°C to +150°C junction temperature, with a maximum power dissipation of 750 mW.

Feature Summary

  • Dual P-channel configuration integrated into a compact 6-pin DSBGA package for space-constrained designs.
  • NexFET technology optimized for low gate charge and fast switching speeds to enhance efficiency.
  • Logic-level gate drive capability allowing direct interfacing with standard logic outputs.

Applications

  • DC-DC converter synchronous rectification stages
  • Load switch applications in portable electronics
  • Power management circuits for mobile devices

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the assembly process. Cross-reference the component marking code with the latest production data to validate authenticity and traceability.

Selection Notes

Select this component when a dual P-channel solution is required within a minimal board area constraint. Ensure the application voltage does not exceed the 20 V rating and that the thermal design accommodates the 750 mW power dissipation limit. Verify that the gate drive voltage aligns with the specified threshold and on-resistance characteristics for optimal performance.

Part Context

This part belongs to the CSD75208W1015 series of NexFET power MOSFETs. It is designed as a complementary pair or independent dual switches within a single small outline package. The series targets high-density power applications where size reduction and switching efficiency are critical design drivers.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching pinout, voltage ratings, and package dimensions only after verifying compatibility with the original manufacturer's specifications.

CSD75208W1015TCSD75208W1015T
$0.99
Buy Now