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The CSD75208W1015T is a dual P-channel NexFET power MOSFET manufactured by Texas Instruments. It features a DSBGA-6 surface-mount package with a footprint of 1x1.5 mm. The device supports a drain-source voltage (Vds) of 20 V and delivers a continuous drain current (Id) of 1.6 A at 25°C. Key electrical parameters include an on-resistance (Rds(on)) ranging from 150 mΩ to 285 mΩ, a gate charge (Qg) of 1.9 nC, and a threshold voltage (Vgs(th)) of 800 mV. Operating temperatures range from -55°C to +150°C junction temperature, with a maximum power dissipation of 750 mW.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the assembly process. Cross-reference the component marking code with the latest production data to validate authenticity and traceability.
Select this component when a dual P-channel solution is required within a minimal board area constraint. Ensure the application voltage does not exceed the 20 V rating and that the thermal design accommodates the 750 mW power dissipation limit. Verify that the gate drive voltage aligns with the specified threshold and on-resistance characteristics for optimal performance.
This part belongs to the CSD75208W1015 series of NexFET power MOSFETs. It is designed as a complementary pair or independent dual switches within a single small outline package. The series targets high-density power applications where size reduction and switching efficiency are critical design drivers.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching pinout, voltage ratings, and package dimensions only after verifying compatibility with the original manufacturer's specifications.