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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 6PICOSTAR
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFBGA
- Supplier Device Package：6-PicoStar
- Grade：-
- Qualification：-
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Overview
The CSD83325LT is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a PICOSTAR surface-mount package with six pins. Key electrical parameters include a drain-source voltage (Vds) of 12 V and a continuous drain current (Id) of 8 A. The device exhibits a maximum on-resistance (Rds(on)) of 5.9 mΩ at Vgs = 4.5 V. Gate charge (Qg) is typically 8.4 nC at Vgs = 4.5 V, with a threshold voltage (Vgs(th)) of 950 mV. Operating temperatures range from -55 °C to +150 °C, with a power dissipation rating of 2.3 W.
Feature Summary
- Dual N-channel configuration within a compact PICOSTAR footprint
- Low on-resistance for efficient power switching
- Enhanced mode operation with standard gate drive compatibility
Applications
- DC-DC converter output stages
- Load switching in portable electronics
- Power management integrated circuits (PMIC) external switches
Procurement Notes
Verify the specific suffix 'LT' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications and pinout orientation. Ensure that the requested component matches the exact part number to avoid discrepancies in package dimensions or electrical characteristics compared to other variants in the CSD83325 series.
Selection Notes
Select this component when a low-voltage, high-current dual MOSFET solution is required in a minimal board area. The 12 V rating suits 5 V and 3.3 V systems. Evaluate thermal performance based on the 2.3 W dissipation limit and the thermal resistance inherent to the PICOSTAR package for the specific application environment.
Part Context
This device belongs to the Texas Instruments NexFET family, designed for high-efficiency power management applications. The CSD83325L variant specifically integrates two independent N-channel MOSFETs into a single small outline package, reducing component count and PCB space compared to discrete solutions.
Replacement Considerations
Consult official substitution guides for compatible dual N-channel MOSFETs with similar Vds, Id, and Rds(on) ratings in comparable packages. Verify pin-to-pin compatibility and thermal characteristics before replacing.
