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Product Detailed Parameters
- Description：MOSFET 2N-CH 4PICOSTAR
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.7W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-XFLGA
- Supplier Device Package：4-Picostar (1.31x1.31)
- Grade：-
- Qualification：-
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Overview
The CSD85302LT is a dual N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 20 V drain-source breakdown voltage and a continuous drain current of 7 A. The device exhibits a maximum on-resistance of 24 mΩ at room temperature, with a gate charge of 6 nC. It operates within an extended temperature range from -55 °C to +150 °C. The component utilizes a PICOSTAR-4 surface-mount package, providing a compact footprint for power applications. Key electrical parameters include a threshold voltage of 680 mV and a power dissipation rating of 1.7 W.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Optimized low on-resistance for efficient power switching
- Extended operating temperature range suitable for harsh environments
Applications
- Low-voltage DC-DC converter circuits
- Power management modules requiring high efficiency
- Battery protection and load switch applications
Procurement Notes
Verify the specific ordering suffix to confirm the packaging format, such as reel or cut tape, as this affects handling procedures. Ensure compliance with RoHS directives and lead-free specifications required by the target assembly process. Confirm moisture sensitivity level ratings prior to soldering to prevent damage during reflow processes.
Selection Notes
Select this component when a dual N-channel solution is required in a minimal footprint. The 20 V rating suits low-voltage systems, while the 7 A current capability supports moderate load requirements. Consider the PICOSTAR-4 package for thermal performance and space-constrained designs compared to larger discrete packages.
Part Context
This part belongs to the CSD85302L series of NexFET Power MOSFETs from Texas Instruments. The LT suffix typically denotes a specific tape and reel packaging variant intended for automated surface-mount assembly. It shares core electrical characteristics with the base CSD85302L model but differs in delivery format.
Replacement Considerations
Direct substitutes must match the 20 V, dual N-channel specification and PICOSTAR-4 package. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with other TI NexFET families offering similar Rds(on) and current ratings for equivalent performance.
