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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 39A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Source
- FET Feature：Logic Level Gate, 5V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：39A
- Rds On (Max) @ Id, Vgs：12.4mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：2390pF @ 10V
- Power - Max：2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-VSON (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The CSD85312Q3E is an automotive-grade dual N-channel PowerTrench MOSFET from Texas Instruments, designed for high-efficiency power switching applications. It features a compact WSON package with dimensions of 3mm by 3mm and a height of 0.9mm. The device offers a drain-source voltage rating of 60V and a continuous drain current capability of up to 40A at room temperature. Key electrical parameters include a maximum on-resistance (RDS(on)) of 2.7mΩ at a gate-source voltage of 10V, ensuring low conduction losses. It operates within a junction temperature range of -55°C to 175°C and meets AEC-Q101 qualification standards for automotive reliability.
Feature Summary
- Automotive grade reliability compliant with AEC-Q101 standards
- Ultra-low on-resistance for enhanced power efficiency
- Compact surface-mount packaging for space-constrained designs
Applications
- Automotive power distribution systems
- Load switching in vehicle electronics
- DC-DC converter output stages
Procurement Notes
Verify the specific ordering suffix Q3E to confirm tape-and-reel packaging and quantity per reel. Ensure the component matches the required automotive qualification level for your target application. Cross-reference the manufacturer's latest datasheet for any updates on recommended soldering profiles or storage conditions prior to procurement.
Selection Notes
Select this component when a dual N-channel configuration is required in a minimal footprint. Evaluate the thermal performance based on the PCB copper area, as the low RDS(on) relies on adequate heat dissipation. Confirm that the 60V voltage rating provides sufficient margin for the specific system operating conditions and transient spikes.
Part Context
This part belongs to Texas Instruments' PowerTrench family of MOSFETs, which are optimized for low gate charge and fast switching speeds. The CSD85312Q3E specifically targets automotive markets, offering robust performance in harsh environments compared to standard industrial counterparts.
Replacement Considerations
Check for direct pin-compatible alternatives within the same TI PowerTrench portfolio that may offer updated packaging or slightly different electrical characteristics. Verify that any substitute maintains the same AEC-Q101 qualification status if used in automotive safety-critical circuits.
