CSD86311W1723

Overview

The CSD86311W1723 is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a DSBGA-12 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 25 V and supports a continuous drain current (Id) of 5 A. Its maximum on-resistance (Rds On) is 42 mOhms, with a gate threshold voltage (Vgs th) of 1 V. The total gate charge (Qg) is 3.1 nC. Operating temperatures range from -55 °C to +150 °C, with a power dissipation rating of 1.5 W.

Feature Summary

• Dual N-channel configuration for integrated circuit design
• NexFET technology optimized for low resistance and fast switching
• DSBGA-12 package for compact surface-mount applications

Applications

• Power management circuits requiring dual channel control
• Low voltage DC-DC converter topologies
• Battery protection and load switch designs

Procurement Notes

Verify the specific ordering suffix against official Texas Instruments documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's datasheet before procurement. Ensure the component matches the required DSBGA-12 footprint for PCB layout compatibility.

Selection Notes

Select this component when a dual N-channel MOSFET with a 25 V rating and 5 A current capacity is required. The 42 mOhm on-resistance suits low-loss applications. Verify that the DSBGA-12 package dimensions fit the target board space. Check thermal requirements against the 1.5 W power dissipation limit.

Part Context

This part belongs to the Texas Instruments NexFET family of power MOSFETs. It is designed for high-efficiency power conversion and management. The dual configuration allows for synchronized switching or half-bridge applications within a single small footprint.

Replacement Considerations

Consult official substitution guides for compatible NexFET devices. Verify pinout and electrical parameters match exactly before replacing.