CSD86330Q3D

Overview

The CSD86330Q3D is an N-channel NexFET power MOSFET module manufactured by Texas Instruments. It features a maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 60 A. The device utilizes a SON surface-mount package with 8 pins. Key electrical parameters include a maximum on-resistance (Rds(on)) of 3.3 mΩ and 8.8 mΩ, a gate threshold voltage range of 0.9 V to 2.1 V, and a maximum gate-source voltage of +8 V. The component supports a maximum power dissipation of 6 W and operates at temperatures up to +150°C.

Feature Summary

• N-channel enhancement mode configuration for efficient switching applications
• Integrated dual-transistor design within a compact surface-mount footprint
• Low on-resistance characteristics optimized for high-current performance

Applications

• DC-DC converter circuits
• Power management modules
• Motor control systems

Procurement Notes

Verify the specific manufacturer datasheet for the CSD86330Q3D to confirm current availability status and exact pinout configurations. Ensure that the selected component matches the required thermal and electrical specifications for the intended circuit design before finalizing procurement decisions.

Selection Notes

Select this component based on its 20 V rating and 60 A current capacity suitable for low-voltage, high-current applications. Consider the SON package dimensions and thermal resistance when designing the PCB layout to ensure adequate heat dissipation and reliable operation under load conditions.

Part Context

This part belongs to the NexFET series from Texas Instruments, focusing on high-efficiency power switching solutions. The integrated dual-MOSFET structure allows for space-saving designs in power electronics compared to discrete single-transistor implementations.

Replacement Considerations

Consult official substitution guides or cross-reference databases for verified equivalent parts. Ensure any replacement maintains compatible voltage, current, and package specifications.