CSD86356Q5D

CSD86356Q5D

$0.66
  • Description:MOSFET 25V
  • Series:*

SKU:7a369a5969a0 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 25V
  • Series:*
  • Mfr:Texas Instruments
  • Package:Bulk
  • Technology:-
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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CSD86356Q5D

Overview

The CSD86356Q5D is a synchronous buck NexFET power block integrating control and sync FETs in a 5-mm × 6-mm SON package. It supports up to 40-A operation with a 22-V maximum input voltage and 25-V drain-source breakdown. Optimized for 5-V gate drive, it achieves 93.0% system efficiency at 25 A under standard test conditions (VIN=12 V, VOUT=1.3 V, fSW=500 kHz). The device operates at switching frequencies up to 1.5 MHz and features ultra-low inductance packaging to minimize common source inductance effects.

Feature Summary

  • Integrated half-bridge power block optimized for high-frequency synchronous buck applications
  • Patented packaging technology eliminates common source inductance for reduced switching losses
  • Parametrically tuned silicon for low effective AC on-impedance and high system efficiency
  • Designed specifically for 5-V gate drive compatibility with external controllers

Applications

  • Multiphase synchronous buck converters
  • Point-of-load (POL) DC-DC converters
  • IMVP, VRM, and VRD applications
  • High-current, low duty cycle power supplies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's orderable addendum to confirm package type and reel quantity. Confirm RoHS compliance and halogen-free status requirements match the project specifications. Ensure the external driver IC provides the required 5-V gate drive voltage range for optimal performance.

Selection Notes

Select this component when designing high-density power stages requiring minimal footprint and superior thermal performance. Evaluate the Effective AC On-Impedance (ZDS(on)) rather than static RDS(on) for accurate efficiency prediction. Ensure the PCB layout provides sufficient copper area to achieve the recommended junction-to-ambient thermal resistance values.

Part Context

This device belongs to Texas Instruments' NexFET PowerBlock family, which integrates power semiconductors in a single package to reduce parasitic inductance. It replaces discrete MOSFET pairs in synchronous buck topologies, offering improved switching performance and simplified layout requirements compared to traditional component arrangements.

Replacement Considerations

Direct replacements must match the 5-mm × 6-mm SON footprint and 25-V rating. Verify that alternative devices support 5-V gate drive logic and offer comparable ZDS(on) values to maintain system efficiency targets without redesigning the thermal management scheme.

CSD86356Q5DCSD86356Q5D
$0.66
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