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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：4290pF @ 15V
- Power - Max：2.7W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-WSON (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The CSD87313DMST is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 30V drain-source voltage rating and is housed in an 8-WSON package measuring 3.3mm x 3.3mm. The device integrates two independent N-channel MOSFETs within a single compact footprint, designed for high-efficiency power switching applications. Key electrical characteristics include a low on-resistance to minimize conduction losses and optimized gate charge for improved switching performance. The component supports surface-mount technology and operates within a standard temperature range suitable for consumer and industrial electronics.
Feature Summary
- Dual N-channel configuration integrating two independent MOSFETs in a single package
- NexFET technology platform optimized for high efficiency and low loss
- Compact 8-WSON (3.3x3.3mm) surface-mount package design
Applications
- DC-DC converter output stages
- Load switch circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all relevant RoHS and REACH compliance requirements for the intended market. Cross-reference the datasheet revision date with the production batch to ensure technical accuracy. Validate the pinout configuration matches the target PCB layout before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required in a minimal footprint. Ensure the 30V voltage rating exceeds the maximum circuit operating voltage with adequate margin. Verify that the thermal performance of the 8-WSON package aligns with the system's heat dissipation capabilities. Compare the total on-resistance and gate charge parameters against alternative devices to optimize overall system efficiency.
Part Context
This part belongs to the CSD87313 series from Texas Instruments, which focuses on low-voltage power switching solutions. The series utilizes NexFET technology to deliver enhanced performance in small packages. It is designed to replace discrete MOSFET arrangements, saving board space and simplifying assembly processes in modern electronic designs.
Replacement Considerations
Consult the official Texas Instruments substitution guide for verified alternatives. Check for compatible packages and electrical ratings if direct replacement is necessary.
