CSD87330Q3DT

CSD87330Q3DT

  • Description:MOSFET 2N-CH 30V 20A 8LSON
  • Series:NexFET™

SKU:279eb4c77c9e Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 20A 8LSON
  • Series:NexFET™
  • Mfr:Texas Instruments
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:20A (Ta)
  • Rds On (Max) @ Id, Vgs:9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA, 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5.8nC @ 4.5V, 11.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:900pF @ 15V, 1632pF @ 15V
  • Power - Max:6W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerLDFN
  • Supplier Device Package:8-LSON (3.3x3.3)
  • Grade:-
  • Qualification:-

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CSD87330Q3DT

Overview

The CSD87330Q3DT is a half-bridge NexFET PowerBlock integrating control and sync FETs in an 8-pin SON package. It supports up to 27-V input voltage and 20-A operation with optimized 5-V gate drive. Key electrical parameters include a drain-to-source voltage of 30 V, typical effective AC on-impedance (ZDS(on)) of 9.4 mΩ for the high-side and 3.6 mΩ for the low-side at VGS = 5 V. Total gate charge is typically 4.8 nC (control) and 9.6 nC (sync) at 4.5 V. The device operates from -55°C to +150°C junction temperature with a maximum power dissipation of 6 W.

Feature Summary

  • Integrated half-bridge topology designed for synchronous buck converters
  • Patented packaging technology minimizes common source inductance and parasitic elements
  • Optimized for high-frequency switching up to 1.5 MHz
  • Parametrically tuned silicon for lowest power loss and highest system efficiency

Applications

  • High-frequency synchronous buck converters
  • Multiphase synchronous buck converters
  • Point-of-load (POL) DC-DC converters
  • IMVP, VRM, and VRD applications

Procurement Notes

Verify the specific ordering suffix 'DT' corresponds to the 7-inch reel quantity of 250 units as documented in the datasheet. Confirm that the application environment remains within the recommended operating conditions, specifically the 4.5 V to 8 V gate drive voltage range. Ensure PCB layout guidelines are strictly followed to minimize parasitic inductances and maintain thermal performance.

Selection Notes

Select this component when designing synchronous buck converters requiring high current density and efficiency under 5-V gate drive conditions. The integrated ZDS(on) rating provides a more accurate indicator of switching performance than traditional DC RDS(on). Consider the thermal resistance characteristics and Safe Operating Area curves when determining board copper requirements and airflow constraints for the target load current.

Part Context

This part belongs to Texas Instruments' NexFET PowerBlock family, which integrates complementary MOSFETs into a single package to reduce system footprint and improve switching speed by eliminating interconnect inductance. The CSD87330Q3D is specifically engineered for high-performance computing and server power supplies where efficiency and thermal management are critical constraints.

Replacement Considerations

Direct replacements must match the 30-V voltage rating, 8-pin SON package dimensions, and compatible gate drive requirements. Verify that alternative components offer similar effective AC on-impedance values to ensure equivalent system efficiency. Check for pinout compatibility and thermal pad configuration to facilitate direct board replacement without redesign.

CSD87330Q3DTCSD87330Q3DT

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